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MJE15032G

Manufacturer:

On Semiconductor

Mfr.Part #:

MJE15032G

Datasheet:
Description:

BJTs TO-220-3 Through Hole NPN 2 W Collector Base Voltage (VCBO):250 V Collector Emitter Voltage (VCEO):250 V Emitter Base Voltage (VEBO):5 V

ParameterValue
Voltage Rating (DC)250 V
Length10.2616 mm
Width4.826 mm
Max Operating Temperature150 °C
Min Operating Temperature-65 °C
Number of Pins3
Height15.748 mm
PackagingTube
Radiation HardeningNo
RoHSCompliant
PolarityNPN
REACH SVHCNo SVHC
Contact PlatingTin
Frequency30 MHz
Number of Elements1
Current Rating8 A
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Power Dissipation2 W
Power Dissipation2 W
Max Collector Current8 A
Collector Emitter Breakdown Voltage250 V
Transition Frequency30 MHz
Element ConfigurationSingle
Max Frequency30 MHz
Collector Emitter Voltage (VCEO)250 V
Gain Bandwidth Product30 MHz
Collector Base Voltage (VCBO)250 V
Collector Emitter Saturation Voltage500 mV
Emitter Base Voltage (VEBO)5 V
hFE Min10
Schedule B8541290080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)
Max Cutoff Collector Current10 µA
Transistor TypeNPN

Stock: 1440

Distributors
pcbx
Unit Price$0.88301
Ext.Price$0.88301
QtyUnit PriceExt.Price
1$0.88301$0.88301
10$0.72394$7.23940
25$0.66059$16.51475
50$0.60278$30.13900
100$0.52797$52.79700
300$0.50370$151.11000
500$0.48054$240.27000
1000$0.45454$454.54000